Qualcomm has now announced their latest top of the line Snapdragon 835 chip in collaboration with Samsung. The Snapdragon 835 replaces the current Snapdragon 820 and 821 chips which has made its way onto a number of flagships that were launched during this year.
The Qualcomm Snapdragon 835 is built using the latest 10nm FinFET nodes. Samsung apparently, started mass producing these somewhere around October this year. Initially, there were some rumours floating around that Qualcomm may opt for TSMC for mass manufacturing their upcoming flagship chip. Thus its quite overwhelming to see Qualcomm keep their decade long partnership with Samsung afloat.
“We are excited to continue working together with Samsung in developing products that lead the mobile industry,” said Keith Kressin, Senior Vice President, Product Management, Qualcomm. “Using the new 10nm process node is expected to allow our premium tier Snapdragon 835 processor to deliver greater power efficiency and increase performance while also allowing us to add a number of new capabilities that can improve the user experience of tomorrow’s mobile devices.”
Samsung had apparently bagged the mass production deal from Qualcomm last year. In fact, both the Snapdragon 820 and 821 chips were produced by Samsung. Talking about the deal, Samsung Executive Vice President and Head of Foundry, Jong Shik Yoon said, “We are pleased to have the opportunity to work closely with Qualcomm Technologies in producing the Snapdragon 835 using our 10nm FinFET technology,” He further added, “This collaboration is an important milestone for our foundry business as it signifies confidence in Samsung’s leading chip process technology.”
Just like every year, Qualcomm didn’t divulge much regarding what’s in store for their upcoming chips. That said, the use of a 10nm FinFET technology is said to make the chip nearly 30 percent better in terms of area efficiency, 27 percent more powerful and last but not the least, nearly 40 percent lighter on battery. Samsung believes that the use of their FinFet technology will empower OEMs to make their devices even slimmer due to the small footprint of the chip.
Qualcomm, however, revealed that the Snapdragon 835 will come with Quick Charge 4.0. This apparently, succeeds the last gen Quick Charge 3.0. The chipmaker claims that their latest charging technology will help you draw 5 hours or more of battery life from just five minutes of Quick Charge. Using Dual Charge, Qualcomm’s parallel charging technology users can enjoy upto 20 percent faster charging and upto 30 percent higher efficiency compared with Quick Charge 3.0. Apart from that Qualcomm claims that their Quick Charge 4.0 integrates USB Type C and USB PD support. While not much can be ascertained about Qualcomm’s claims so far, it can be assumed that with Quick Charge 4.0 the company may just be able to match up with class leading VOOC charging of Oppo.
Quick Charge 4.0 features third generation Intelligent Negotiation for Optimum Voltage technology or INOV in short that includes real time thermal management to optimally detect and select the power transfer level for a given thermal condition. With Quick Charge 4.0, Qualcomm is also introducing their latest power management ICs that are engineered to provide faster battery charging from a 5V USB Type C source.
”As mobile devices become more capable and feature rich, people tend to use them more. That’s why consumer demand and awareness for fast-charging solutions is now at an all-time high,” said Alex Katouzian, Senior Vice President, Product Management, Qualcomm. “Quick Charge 4.0 addresses that need by providing up to 50 percent battery charge in roughly 15 minutes or less, so you don’t have to spend all day chained to your charging cable.”
The Qualcomm Snapdragon 835 using the latest 10nm FinFET nodes and Quick Charge 4.0 is said to roll out commercially around the first quarter of 2017.